G. Hobler, G. Otto, H. Hutter, K. Mayerhofer, Kurt Piplits, Leopold Palmetshofer,
"Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements"
, in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and, Vol. 242, Seite(n) 667-669, 2006, ISSN: 1872-9584
Original Titel:
Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined from Channeling Profile Measurements
Sprache des Titels:
Englisch
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Forschungs-