G. Hobler, A. Simionescu, Leopold Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, G. Stingeder,
"Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon"
: Proceedings of the 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, 1995, G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. v. Criegern, C. Tian, G. Stingeder: Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon; Proc. 3rd Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles iin Semiconductors (1995)
Original Titel:
Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon
Sprache des Titels:
Englisch
Original Buchtitel:
Proceedings of the 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors
Erscheinungsjahr:
1995
Notiz zum Zitat:
G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. v. Criegern, C. Tian, G. Stingeder: Verification of Models for the Simulation of Boron Implantation into Crystalline Silicon; Proc. 3rd Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles iin Semiconductors (1995)
Forschungs-