From Single Organic Devices to Integrated Circuits
Sprache des Titels:
Englisch
Original Buchtitel:
International Symposium on Flexible Organic Electronics
Original Kurzfassung:
Organic electronic applications become more and more part of everyday life. Through the increasing attention towards the applications of devices, not only the need for an accurate and efficient model [1] to simulate circuits based on these devices increases but also the correct extraction of the model parameters and the description of interconnects, crossovers and vertical interconnect access (via) arises. This work gives an overview of the requirements for the design and the characterization of organic integrated circuits.
Large research efforts have been done in the field of materials and processing recently. As a consequence, for instance, the organic semiconductor mobility has improved in the last few years. The switching speed of single devices has increased to values in the upper kHz range and more [2, 3, 4]. Therefore, an accurate dynamic characterization of the organic devices is necessary. Such a dynamic characterization of OFETs implies the determination of the small signal model (operation point dependent) and the elements of the large signal model. Therefore scattering parameter measurements [5] at different operation points have to be done with special test structures (e.g. open-circuit, short-circuit) [5]. To extract only the real parameters of the device the parasitics of the surrounding test structure have to be de-embedded. With this extraction setup it is possible to determine the right values for the dynamic model of organic devices.
Among other activities, decreasing the supply voltages in order to reduce the power consumption as well as being compatible to other existing technologies (e.g. standard bulk silicon technologies) is a key issue on the roadmap in this field. Thus the dielectric thickness has to be reduced, which again leads to higher gate leakage currents and additional capacitive coupling effects between signal lines.
Sprache der Kurzfassung:
Deutsch
Englische Kurzfassung:
Organic electronic applications become more and more part of everyday life. Through the increasing attention towards the applications of devices, not only the need for an accurate and efficient model [1] to simulate circuits based on these devices increases but also the correct extraction of the model parameters and the description of interconnects, crossovers and vertical interconnect access (via) arises. This work gives an overview of the requirements for the design and the characterization of organic integrated circuits.
Large research efforts have been done in the field of materials and processing recently. As a consequence, for instance, the organic semiconductor mobility has improved in the last few years. The switching speed of single devices has increased to values in the upper kHz range and more [2, 3, 4]. Therefore, an accurate dynamic characterization of the organic devices is necessary. Such a dynamic characterization of OFETs implies the determination of the small signal model (operation point dependent) and the elements of the large signal model. Therefore scattering parameter measurements [5] at different operation points have to be done with special test structures (e.g. open-circuit, short-circuit) [5]. To extract only the real parameters of the device the parasitics of the surrounding test structure have to be de-embedded. With this extraction setup it is possible to determine the right values for the dynamic model of organic devices.
Among other activities, decreasing the supply voltages in order to reduce the power consumption as well as being compatible to other existing technologies (e.g. standard bulk silicon technologies) is a key issue on the roadmap in this field. Thus the dielectric thickness has to be reduced, which again leads to higher gate leakage currents and additional capacitive coupling effects between signal lines.
Forschungs-