On the Mechanism of Ion Transport in Thin (1-100 nm) Oxide films on Aluminum and Tantalum
Sprache des Titels:
The growth of anodic oxide films on Al and Ta is determined by the electric field strength. A
simultaneous migration of anions (e.g. 0^2-) and cations (e.g. Al^3+) is necessary to prevent the
formation of uncompensated space charges, which would lower the local field strength and would
hinder further oxide growth. The formation of mobile ions is possible only at the interfaces and
their migration through requires some time, which depends on the local field strength.
Therefore, the movement of space charges and the local field strength are coupled by Poisson's
law. Result is a delayed oxide formation or overshoot, well-known from potentiostatic and
potential sweep experiments. Fundamentally, the film grows at both interfaces.
Sprache der Kurzfassung:
Bulletin of the Chemists and Technologists of Macedonia
Anzahl der Seiten:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift