Diffraction Anomalous Fine Structure study and atomistic simulation of Ge/Si nanoislands
Sprache des Titels:
Englisch
Original Kurzfassung:
We applied Grazing Incidence Diffraction Anomalous Fine Structure to the study of the structure of Ge
dome-shaped nanoislands, grown by Molecular Beam Epitaxy on Si (001) substrates at a temperature
of 650°C. We determined the vertical composition of the islands showing the presence of a strong Ge/
Si intermixing that is nearly constant from bottom to top. In particular, an abrupt change is found at
the substrate interface where the composition switches from pure Si to Ge0.6Si0.4. The analysis of the Diffraction
Anomalous Fine Structure oscillations of the spectra is crucial to obtain the true composition profile.
We performed atomistic simulations to investigate the role of the strained substrate underneath the
dome on the diffraction results and to quantify the resolution of our method. Anomalous Diffraction spectra
and Diffraction Anomalous Fine Structure oscillations have been simulated for a real size and real
shape cluster including faceting, giving a more detailed data interpretation and understanding of the
Ge?Si intermixing mechanism.
Sprache der Kurzfassung:
Englisch
Journal:
Nuclear Instruments and Methods in Physics Research Section B
Volume:
284
Seitenreferenz:
58 - 63
Erscheinungsjahr:
2012
ISSN:
1872-9584
Anzahl der Seiten:
6
Notiz zur Publikation:
<ce:title>E-MRS 2011 Spring Meeting, Symposium M: X-ray techniques for materials research-from laboratory sources to free electron lasers</ce:title>
Forschungs-