Surface patterned dielectrics by direct writing of anodic oxides using scanning droplet cell microscopy
Sprache des Titels:
Scanning droplet cell microscopy was used for patterning of anodic oxide lines on the surface of Al thinfilms by direct writing. The structural modifications of the written oxide lines as a function of the writingspeed were studied by analyzing the relative error of the line widths. Sharper lines were obtained forwriting speeds faster than 1 mm min?1. An increase in sharpness was observed for higher writing speeds.A theoretical model based on the Faraday law is proposed to explain the constant anodisation currentmeasured during the writing process and yielded a charge per volume of 13.4 kC cm?3for Al2O3. Fromcalculated oxide film thicknesses the high field constant was found to be 24 nm V?1. Electrochemicalimpedance spectroscopy revealed an increase of the electrical permittivity up to ? = 12 with the decreaseof the writing speed of the oxide line. Writing of anodic oxide lines was proven to be an important stepin preparing capacitors and gate dielectrics in plastic electronics.