G. Pettinari, Marco Felici, Rinaldo Trotta, M. Capizzi, A. Polimeni,
"Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring"
, in Journal of Applied Physics, Vol. 115, Nummer 1, Seite(n) 012011, 2014, ISSN: 1089-7550
Original Titel:
Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
Sprache des Titels:
Englisch
Original Kurzfassung:
The variation of the band gap energy of III-N-V semiconductors induced by hydrogen incorporation is the most striking effect that H produces in these materials. A special emphasis is given here to the combination of N-activity passivation by hydrogen with H diffusion kinetics in dilute nitrides. Secondary ion mass spectrometry shows an extremely steep (smaller than 5?nm/decade) forefront of the H diffusion profile in Ga(AsN) under appropriate hydrogenation conditions. This discovery prompts the opportunity for an in-plane nanostructuring of hydrogen incorporation and, hence, for a modulation of the material band gap energy at the nanoscale. The properties of quantum dots fabricated by a lithographically defined hydrogenation are presented, showing the zero-dimensional character of these novel nanostructures. Applicative prospects of this nanofabrication method are finally outlined.
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