Muhammad Furqan, Faisal Ahmed, Martin Jahn, Andreas Stelzer,
"An E-band SiGe power amplifier with 28dB gain and 19.2 dBm output power utilizing an on-chip differential power combiner"
: Microwave Integrated Circuits Conference (EuMIC), 2015 10th European, Seite(n) 21-24, 9-2015
An E-band SiGe power amplifier with 28dB gain and 19.2 dBm output power utilizing an on-chip differential power combiner
Sprache des Titels:
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
This paper presents the design of an E-band power amplifier for high speed point-to-point communications (81-86 GHz). A four stage common emitter amplifier is designed and fabricated in a SiGe:C technology featuring 200-GHz fT heterojunction bipolar transistors. Two modules are combined using an on-chip power combiner which results in a measured saturated output power of 19.2 dBm and an output referred 1-dB compression point of 17dBm. Measurement results show a small-signal gain and a peak power-added efficiency of 28dB and 11% respectively. The PA demonstrates a figure-of-merit of 46dB which is amongst the highest reported in this frequency range. The on-chip power combiner which is separately fabricated and characterized shows a highly balanced performance with a maximum amplitude imbalance of 0.15dB across 80???90 GHz and a phase imbalance of 2 degrees across 70-90 GHz.