Günther Bauer, A. A. Darhuber, Vaclav Holy,
""Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping""
, 1996, ISBN: 1-55899-352-5, G. Bauer, A. Darhuber, V. Holy: "Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping", Mat. Res. Soc. Symp. Proc. 406, 457-468 (1996), ISBN 1-55899-352-5
Original Titel:
"Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping"
Sprache des Titels:
Englisch
Englischer Titel:
Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping
Erscheinungsjahr:
1996
Notiz zum Zitat:
G. Bauer, A. Darhuber, V. Holy: "Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping", Mat. Res. Soc. Symp. Proc. 406, 457-468 (1996), ISBN 1-55899-352-5
ISBN:
1-55899-352-5
Publikationstyp:
Aufsatz / Paper in sonstiger referierter Fachzeitschrift