On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets
Sprache des Titels:
Englisch
Original Kurzfassung:
We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot.
Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with
tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of
magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0) ?
0.10?0.15] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz,
which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such
narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards
the development of an optimized hybrid semiconductor-atom interface.
Sprache der Kurzfassung:
Englisch
Journal:
Physical Review B: Condensed Matter and Materials Physics
Forschungs-