"Time-Controlled and FinFET Compatible Sub-Bandgap References Using Bulk-Diodes"
, in IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 66, Nummer 10, Seite(n) 1608-1612, 2019, ISSN: 1558-3791
Time-Controlled and FinFET Compatible Sub-Bandgap References Using Bulk-Diodes
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This brief presents an innovative technique for precise reference generation based on ?digital-alike? operation. The bias of pn-junctions is defined trough pulse timings, while respective PTAT and CTAT signals are sampled from the voltage-decay of a capacitor. The greatly simple structures offer intrinsic supply robustness and use charge sharing or addition, to achieve large reverse-bandgap levels. Here, we employ the bulk-to-substrate diode of any baseline process combined with charge-pump function, instead of BJT devices. Two different circuit ideas were designed in 16-nm FinFET, with ultra-low power requirements. The first version achieves an untrimmed 3?-accuracy of ±0.82%, realizing 235-mV reference output down to 0.85-V supply. A second IP carries lowest complexity using a single diode only: it consumes 21 nA at 1680 ?m2 active area, and provides larger levels of Vref ~370 mV at merely ±2.7 mV total spread from silicon data. Unlike prior art, the compact reverse bandgaps do not require typical analog structures, like resistors, matched biasing, or differential amplifiers.
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IEEE Transactions on Circuits and Systems II: Express Briefs