"A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET"
: A-SSCC 2019 Proceedings, 11-2019
A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET
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A-SSCC 2019 Proceedings
This paper presents a new concept for sub- bandgap circuits, based on direct generation of PTAT current with larger and adjustable temperature coefficient. The reference voltage is generated inside the feedback loop, which facilitates good supply rejection, low-noise and high precision performance. A 3?-spread of only ±0.64% across split-lots was observed in a 16nm FinFET process on 4400µm2, without trimming or any switching techniques. By using NPN bipolar devices, noise levels of ~130nV/sqrt(Hz) at 1kHz can be achieved at 125µA power drain. Different configurations are explained, which allow flexible reference levels or very low supply voltages of < 0.85V.