Y. Suprun-Belevich, Leopold Palmetshofer, B. J. Sealy, N. Emerson,
"Mechanical strain and electrically active defects in Si implanted with Ge+ ions"
, in Semiconductor Science and Technology, Vol. 14, Seite(n) 565?569, 1999, Yu. Suprun-Belevich, L. Palmetshofer, B.J. Sealy, N. Emerson Mechanical strain and electrically active defects in Si implanted with Ge+ ions Semicond. Sci. Technol. 14, 565 (1999)
Original Titel:
Mechanical strain and electrically active defects in Si implanted with Ge+ ions
Sprache des Titels:
Englisch
Journal:
Semiconductor Science and Technology
Volume:
14
Seitenreferenz:
565?569
Erscheinungsjahr:
1999
Notiz zum Zitat:
Yu. Suprun-Belevich, L. Palmetshofer, B.J. Sealy, N. Emerson Mechanical strain and electrically active defects in Si implanted with Ge+ ions Semicond. Sci. Technol. 14, 565 (1999)
Forschungs-