Waferbonding is an increasingly important technical process for fabricating advanced semiconductor structures as e.g. tandem or tridem solar cells, MEMS, etc. The physics of the interfacial processes is, however, not really well understood and often a multitude of heuristic approaches is tested to achieve a high bond strength at a comparable low temperature. In our contribution we will review the experimental findings of ref.[1,2] and present in addition a general model based the minimization of Gibbs free energy., containing besides the usual thermodynamic quantities also contributions from chemical potential, magnetic energy, electric energy, strain energy, and most important, interface and surface energies
Forschungs-