A 120-GHz FMCW Radar Frontend Demonstrator Based on a SiGe Chipset
Sprache des Vortragstitels:
Englisch
Original Tagungtitel:
European Microwave Week (EuMC 2011)
Sprache des Tagungstitel:
Englisch
Original Kurzfassung:
This paper presents a frequency-modulated
continuous-wave (FMCW) radar operating at 120 GHz. It was
built with Silicon-Germanium (SiGe) chips that employ HBTs
with 320 GHz fmax. The chipset comprises a fundamental-wave
signal-generation chip with a voltage-controlled oscillator (VCO)
that provides frequencies between 114GHz and 130GHz and a
corresponding dual transceiver (TRX) chip with monostatic and
quasi-monostatic TRX cells. The single-stage cascode amplifiers
employed in the TRX chip were characterized in separate test
chips and yielded peak small-signal gains of approximately
15 dB. Finally, a quasi-monostatic two-channel FMCW radar
front end with off-chip differential microstrip-antennas was built
on RF substrate. FMCW radar measurements with frequency
chirps from 119GHz to 122GHz verified the functionality of
the designed radar sensor.
Forschungs-